Oves Badami
Assistant Professor Grade 1
Publications - 42Publications - 42
Publications - 42Publications (42)
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ConferencesSchrödinger equation based quantum corrections in drift-diffusion: A multiscale approach2019 | Institute of Electrical and Electronics Engineers Inc.- ConferencesPhysical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides2019 | Institute of Electrical and Electronics Engineers Inc.
- ConferencesMultiscale modeling of charge trapping in molecule based flash memories2019 | Institute of Electrical and Electronics Engineers Inc.
- ConferencesSurface Roughness Scattering in NEGF using self-energy formulation2019 | Institute of Electrical and Electronics Engineers Inc.
- ConferencesSemi-classical modeling of nanoscale nMOSFETs with III-V channel2019 | Institute of Electrical and Electronics Engineers Inc.
- ConferencesNew device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits2018 | Institute of Electrical and Electronics Engineers Inc.
- ConferencesNEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations2018 | Institute of Electrical and Electronics Engineers Inc.
- ConferencesPerformance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects2018 | Institute of Electrical and Electronics Engineers Inc.
- ArticlesBenchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating2018 | Institute of Electrical and Electronics Engineers Inc.
ArticlesImproved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme2017 | American Institute of Physics Inc.- ConferencesSurface roughness limited mobility in multi-gate FETs with arbitrary cross-section2017 | Institute of Electrical and Electronics Engineers Inc.
- ArticlesAn Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs2016 | Institute of Electrical and Electronics Engineers Inc.
OtherErratum: Tunneling-triggered bipolar action in junctionless tunnel field-effect transistor (Appl. Phys. Express (2014) 7 (124302))2015 | Japan Society of Applied Physics- ConferencesImproved surface roughness modeling and mobility projections in thin film MOSFETs2015 | Editions Frontieres
- ArticlesTunneling-triggered bipolar action in junctionless tunnel field-effect transistor2014 | Japan Society of Applied Physics
