This paper presents the theory, implementation and application of a new quantum transport, NEGF based modelling approach employing a full-band Empirical Pseudopotential (EP) Hamiltonian. The use of a hybrid real-space/plane-waves basis results in a remarkable reduction of the computational burden compared to a full plane waves basis, which allowed us to obtain complete, self-consistent simulations for both FETs and Tunnel FETs in Si or in Ge, and with geometrical features in line with forthcoming CMOS technologies. © 2017 IEEE.

Oves Badami

Department of Electrical Engineering

M.G. Pala

D. Esseni

Indian Institute of Technology Hyderabad (IITH) is a premier institute of science and technology established in 2008. IITH has been consistently ranked in the&nbsp;<a href="https://iith.ac.in/reports/" rel="noopener noreferrer">top 10 institutes</a>&nbsp;in India for Engineering&nbsp;<a href="https://www.nirfindia.org/2021/EngineeringRanking.html" rel="noopener noreferrer" target="_blank">according to NIRF</a>&nbsp;making it one of the most coveted schools for science and technology in the country.

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Journal	Data powered by TypesetTechnical Digest - International Electron Devices Meeting, IEDM
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN	01631918