This paper presents the derivation, implementation and validation of a new model for Surface Roughness Scattering (SRS) in multi-gate FETs (MuGFETs) and gate-all-around nanowires (GAA-NW) FETs. The model employs a non linear relation between SRS matrix elements and interface fluctuations, that in planar MOSFETs allowed us to reconcile mobility simulations with experimental values for the r.m.s. interface roughness Δτη8 [1], [2]. The model is formulated for fairly arbitrary cross-sections and biasing conditions. © 2016 IEEE.

Oves Badami

Department of Electrical Engineering

D. Lizzit

R. Specogna

D. Esseni

Indian Institute of Technology Hyderabad (IITH) is a premier institute of science and technology established in 2008. IITH has been consistently ranked in the&nbsp;<a href="https://iith.ac.in/reports/" rel="noopener noreferrer">top 10 institutes</a>&nbsp;in India for Engineering&nbsp;<a href="https://www.nirfindia.org/2021/EngineeringRanking.html" rel="noopener noreferrer" target="_blank">according to NIRF</a>&nbsp;making it one of the most coveted schools for science and technology in the country.

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Journal	Data powered by TypesetTechnical Digest - International Electron Devices Meeting, IEDM
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN	01631918