Indian Institute of Technology Hyderabad (IITH) is a premier institute of science and technology established in 2008. IITH has been consistently ranked in the&nbsp;<a href="https://iith.ac.in/reports/" rel="noopener noreferrer">top 10 institutes</a>&nbsp;in India for Engineering&nbsp;<a href="https://www.nirfindia.org/2021/EngineeringRanking.html" rel="noopener noreferrer" target="_blank">according to NIRF</a>&nbsp;making it one of the most coveted schools for science and technology in the country.

IITH offers&nbsp;<a href="https://iith.ac.in/academics/under-graduate/">undergraduate programs</a>&nbsp;in all the classical engineering disciplines, applied sciences, design, as well as several modern interdisciplinary areas. Students are given a flexibility to explore a broad set of areas, and potentially pursue a minor or double major in a discipline that is not their own. Students who wish to seek a deeper understanding of their own discipline are strongly encouraged to get involved in cutting-edge research with the help of a faculty to mentor them, and earn an Honors in their own field.

The very foundation of IIT Hyderabad is based on&nbsp;<a href="https://iith.ac.in/research/">research and innovation</a>. The vibrant research culture is evident from the number of patents and publications that IITH produces consistently every year. IITH offers&nbsp;<a href="https://iith.ac.in/academics/programmes-offered/">graduate programs</a>&nbsp;at both a masters, and a doctoral level, in several diverse areas. There are separate programs for technology, design, science, and liberal arts. The&nbsp;<a href="https://iith.ac.in/academics/post-graduate/">MTech program</a>&nbsp;is offered in various modes and durations to cater to the ever-growing need of postgraduate level professionals in the country.

IITH encourages and supports&nbsp;<a href="https://iic-iith.netlify.app/index.html" rel="noopener noreferrer" target="_blank">innovation and entrepreneurship</a>&nbsp;at every stage. The minor program in entrepreneurship is open to all students of IITH, and many of the courses are offered by industrialists who are entrepreneurs themselves. There are various&nbsp;<a href="https://iith.ac.in/research/centres-incubators/">innovation centers and incubators</a>&nbsp;that promote entrepreneurship and help mentor young innovators. IITH has been very successful in building tie-ups with leading academic institutions around the globe.

IITH enjoys a very special relationship with Japanese universities and industries that goes beyond academic and research collaborations. In fact, some of the iconic buildings in IITH campus will carry the signature of Japanese architecture.

IITH creates a unique holistic ecosystem for education that offers interactive learning, a very flexible academic structure, cutting-edge research, strong industry collaboration, and entrepreneurship. This is an environment which enables students and faculty to translate their dreams into realities.

IIT Hyderabad

Multiple gate MOSFETs (MuGFET) have gained significant attention as the scaling of the conventional MOSFET comes to an end. Of the possible architectures, the gate-all-around nanowire (NW) transistor offers the best gate control over the channel. In order to model GAA nanowire devices for channel lengths less than 10nm, while preserving a connection to the drift-diffusion framework familiar to device engineers, we have developed a quantum-corrected transport simulator that includes Quantum Drift-Diffusion (QDD) [1] and Quantum Energy Balance (QEB). This formalism is applied to the example of the NW junctionless transistor (JLT), an interesting modification to the NW-MOSFET obtained by replacing the n+-p-n+ structure by a bar of n+ region, that promises smaller variability [2]. © 2012 IEEE.

Department of Electrical Engineering

World University root node

2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Quantum drift-diffusion and quantum energy balance simulation of nanowire junctionless transistors

In this paper we have developed a quantum driftdiffusion (QDD) and quantum energy-balance (QEB) based simulator for scaled nanowire devices. Solving the QDD+QEB along the length of the wire together with Schrodinger equation across its cross-section allows us to take into account the energy quantization, velocity overshoot and tunneling. In addition, the Schrodinger equation reduces the dimensionality of the transport equations. We also discuss the discretization scheme and numerical implementation of QDD and QEB. This was then applied to a specific case of nanowire MOSFET. © 2012 IEEE.