In this paper we have developed a quantum driftdiffusion (QDD) and quantum energy-balance (QEB) based simulator for scaled nanowire devices. Solving the QDD+QEB along the length of the wire together with Schrodinger equation across its cross-section allows us to take into account the energy quantization, velocity overshoot and tunneling. In addition, the Schrodinger equation reduces the dimensionality of the transport equations. We also discuss the discretization scheme and numerical implementation of QDD and QEB. This was then applied to a specific case of nanowire MOSFET. © 2012 IEEE.

Oves Badami

Department of Electrical Engineering

N. Kumar

D. Saha

S. Ganguly

Indian Institute of Technology Hyderabad (IITH) is a premier institute of science and technology established in 2008. IITH has been consistently ranked in the&nbsp;<a href="https://iith.ac.in/reports/" rel="noopener noreferrer">top 10 institutes</a>&nbsp;in India for Engineering&nbsp;<a href="https://www.nirfindia.org/2021/EngineeringRanking.html" rel="noopener noreferrer" target="_blank">according to NIRF</a>&nbsp;making it one of the most coveted schools for science and technology in the country.

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Journal	Data powered by TypesetInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.