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Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects
, F. Driussi, P. Palestri, L. Selmi, D. Esseni
Published in Institute of Electrical and Electronics Engineers Inc.
2018
Pages: 13.2.1 - 13.2.4
Abstract
We perform a comprehensive comparison of FinFETs, stacked nanowires (stacked NWs), circular and square gate-all-around (GAA) n-FETs with same footprint, by using an in-house deterministic BTE solver accounting for quantum confinement, a wide set of scattering mechanisms and self-heating. We show that an increase in surface roughness (SR) can frustrate the improvement in on current, Ion, that for high-quality interfaces we observe in stacked NWs compared to FinFETs. Simulations suggest that SR also influences whether or not In0.53Ga0.47As can provide better Ion than strained silicon (sSi). © 2017 IEEE.
About the journal
JournalData powered by TypesetTechnical Digest - International Electron Devices Meeting, IEDM
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN01631918