In this work, we have shown and validated bonding of titanium (Ti) coated glass with (100) silicon wafer at lower thermocompression cycle of 377 °C temperature and a nominal contact pressure of 0.15 MPa. Excellent bond strength&gt; 100MPa and void free interface have been observed using scanning acoustic tomography (SAT), which clearly suggest that optimized temperature-pressure together can provide a superior quality bonding. Furthermore, post-bond dicing was performed in order to validate further the bonding strength which was confirmed by successfully dicing the Glass-Silicon pair without any damage to the bonding interface. This noble, low cost and low temperature simple bonding approach must be useful in hermetic sealing of microfluidic channels for on-chip compatible applications. © 2018 IEEE.

Shiv Govind Singh

Department of Electrical Engineering

Siva Rama Krishna Vanjari

C.H. Kumar

A.K. Pnaigrahi

N. Paul

S. Bonam

A.K. Panigrahi

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IIT Hyderabad

2018 IEEE International Interconnect Technology Conference, IITC 2018

Silicide Based Low Temperature and Low Pressure Bonding of TI/SI for Microfludic and Hermetic Selaling Application

Journal	Data powered by Typeset2018 IEEE International Interconnect Technology Conference, IITC 2018
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.