A generalised form of a concurrent dual-band matching network has been proposed for a packaged CMOS low noise amplifier (LNA). To eliminate the detrimental effects of component non-idealities on matching performance, a modified set of design equations has been developed. The robustness of the proposed network has been demonstrated at the GSM900 and DCS1800 bands. Incorporating this network, an LNA designed in a 0.18 μm CMOS process provides S11 of -33 and -30 dB, gain of 16.54 and 11.03 dB and noise figure of 1.35 and 2.37 dB, respectively, at 900 MHz and 1.7 GHz. The LNA draws a current of 2 mA from 1.8 V supply. © The Institution of Engineering and Technology 2009.