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Dual Damascene Compatible, Copper Rich Alloy Based Surface Passivation Mechanism for Achieving Cu-Cu Bonding at 150 Degree C for 3D IC Integration
A.K. Panigrahi, T. Ghosh, ,
Published in Institute of Electrical and Electronics Engineers Inc.
2017
Pages: 982 - 988
Abstract
In this paper, we demonstrate a low temperature, low pressure wafer level damascene compatible Cu-Cu thermocompression bonding using an optimized ultra-thin Copper-Nickel-Manganese based alloy layer, Manganin as passivation layer. Surface oxidation and roughness are the major bottlenecks in achieving low temperature and low pressure high quality Cu-Cu bonding. Manganin alloy have dual role of protecting Cu surface from oxidation even at higher temperature. ( © 2017 IEEE.
About the journal
JournalData powered by TypesetProceedings - Electronic Components and Technology Conference
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN05695503