Get all the updates for this publication
Conferences
Superior Work Function Variability Performance of Horizontally Stacked Nanosheet FETs for Sub-7-nm Technology and beyondPublished in Institute of Electrical and Electronics Engineers Inc.
2020
In this paper, work function variability (WFV) of stacked nanosheet FET (NSHFET) has been numerically investigated using 3-D quantum corrected Drift-Diffusion simulation framework for sub-7nm high performance logic applications. The WFV induced NSHFET performance is investigated using RGG (ratio of average grain size to gate area) plot for fair comparison against nanowire FET (NWFET) as the effective grain size (Gsize.eff) is smaller than actual grain size (Gsize). From RGG plot analyis, it is found that NSHFET shows better immunity towards WFV induced VT variation by 15% compared to NWFET. The VT variation due to WFV is decreased by 40.47% and 29.16% for 3-stacked NSHFET and NWFET respectively compared to single stack devices. NSHFET exhibits lesser WFV induced OFF-current (IOFF) variation by 57.46% compared to NWFET. NSHFET shows better WFV induced threshold voltage mismatch index (AVT=0.7mV.μ m) compared to NWFET (AVT=1.2mV.μ m). © 2020 IEEE.
Content may be subject to copyright.
About the journal
| Journal | Data powered by Typeset4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings |
|---|---|
| Publisher | Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc. |
Authors (1)
Kaushik Nayak- Superior Work Function Variability Performance of Horizontally Stacked Nanosheet FETs for Sub-7-nm Technology and beyond
- Ambient Temperature-Induced Device Self-Heating Effects on Multi-Fin Si CMOS Logic Circuit Performance in N-14 to N-7 Scaled Technologies
- Random dopant fluctuation induced variability in undoped channel si gate all around nanowire n-MOSFET
- TCAD Analysis of O-Terminated Diamond m-i-p+Diode Characteristics Dependencies on Surface States CNL and Metal-Induced Gap States
