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Silicon anisotropic etching in ternary solution composed of TMAH+Triton+NH2OH
V. Swamalatha, A.V. Narasimha Rao,
Published in Electrochemical Society Inc.
2017
Volume: 77
   
Issue: 11
Pages: 1737 - 1746
Abstract
Present work reports the anisotropic etching characteristics of silicon in various concentrations of tetramethylammonium hydroxide (TMAH) without and with addition of 10% hydroxylamine (NH2OH) and Triton X-100 ranging from ppb to ppm. The etch rate, undercutting at convex comers, and etched surface morphology are investigated in pure TMAH, TMAH+NH2OH, and different compositions of TMAH+NH2OH+Triton (i.e. ternary solution). High etch rate and undercutting are achieved in NH2OH-added 15 wt% TMAH, while 25 wt% TMAH + 10% NH2OH + 1 ppm Triton provided significantly less comer undercutting with reasonably good etch rate of Si{100}. This work is very useful for engineering applications for the fabrication of microstructures using silicon wet bulk micromachining for MEMS-based devices.
About the journal
JournalECS Transactions
PublisherElectrochemical Society Inc.
ISSN19386737