The demonstration of a quasi-two-dimensional electron gas (2DEG) in LaAlO3/SrTiO3 heterostructures has stimulated intense research activity in recent years. The 2DEG has unique properties that are promising for applications in all-oxide electronic devices. For such applications it is desirable to have the ability to control 2DEG properties by external stimulus. Here, based on first-principles calculations we predict that all-oxide heterostructures incorporating ferroelectric constituents, such as KNbO3/ATiO3 (A=Sr, Ba, Pb), allow creating a 2DEG switchable between two conduction states by ferroelectric polarization reversal. The effect occurs due to the screening charge at the interface that counteracts the depolarizing electric field and depends on polarization orientation. The proposed concept of ferroelectrically controlled interface conductivity offers the possibility to design novel electronic devices. © 2009 The American Physical Society.