Photoexcited Kelvin probe force microscope is used to image hot carriers excited in transition metal nitride-semiconductor heterostructures. Both hot holes are hot electron injections are revealed depending on the carrier types of the semiconductors. © OSA 2021, © 2021 The Author(s)

Satish Laxman Shinde

Department of Physics

M.-W. Yu

S. Ishii

N.K. Tanjaya

K.-P. Chen

T. Nagao

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Optics InfoBase Conference Papers

Plasmon-induced charge transport at transition metal nitride-semiconductor interfaces via in situ nanoimaging

Journal	Data powered by TypesetOptics InfoBase Conference Papers
Publisher	Data powered by TypesetThe Optical Society
ISSN	1084-7529
Impact Factor	1.230
Citation Style	unsrt
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