Photoexcited Kelvin probe force microscope is used to image hot carriers excited in transition metal nitride-semiconductor heterostructures. Both hot holes are hot electron injections are revealed depending on the carrier types of the semiconductors. © 2021 OSA.

Satish Laxman Shinde

Department of Physics

M.-W. Yu

S. Ishii

N. Kevin Tanjaya

K.-P. Chen

T. Nagao

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2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings

Plasmon-induced Charge Transport at Transition Metal Nitride-Semiconductor Interfaces via in Situ Nanoimaging

Journal	Data powered by Typeset2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN	21622701
Open Access	No