An improved Space Vector PWM (SVPWM) switching scheme for enhanced efficiency in a Silicon IGBT (Si-IGBT) + Silicon Carbide MOSFET (SiC-MOSFET) based hybrid Voltage Source Inverter (VSI) is proposed in this paper. The hybrid VSI topology uses six Si-IGBTs and two SiC-MOSFETs. The Si-IGBTs form a conventional three-leg VSI (B6 structure), while the additional SiC devices are used to realise the zero voltage vector in the VSI. The proposed SVPWM switching scheme distributes the dwell time of the zero vectors such that the two active vectors are always separated from each other by an intermittent zero vector. This helps to completely shift the switching losses from the Si-IGBTs to the SiC devices, thereby resulting in improved efficiency. The paper compares the hybrid VSI operated with the proposed SVPWM technique against a standard Si-IGBT based VSI working with the conventional 7-step SVPWM technique in a grid-connected inverter application. The performance in terms of the output THD and the overall converter efficiency is evaluated. Accurate loss calculation is enabled by the thermal analysis platform in PLECS using the loss simulation models supplied by the device manufacturers. The results show a significant reduction in the converter power loss for the hybrid VSI with the proposed SVPWM scheme while maintaining acceptable THD performance. © 2022 IEEE.