A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN-metal–insulator–metal (MIM)) structure, the former shows higher Q-factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography-free and scalable, which paves a way for large scale thermal emitters in practical usage. © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Satish Laxman Shinde

Department of Physics

Z.-Y. Yang

S. Ishii

A.T. Doan

T.D. Dao

Y.-P. Lo

K.-P. Chen

T. Nagao

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IIT Hyderabad

Advanced Optical Materials

Narrow-Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability

Journal	Data powered by TypesetAdvanced Optical Materials
Publisher	Data powered by TypesetWiley-VCH Verlag
ISSN	21951071