An Ultra-Fast On-The-Fly (UF-OTF) IDLIN technique having 1 μs resolution is developed and used to study gate insulator process dependence of NBTI in Silicon Oxynitride (SiON) p-MOSFETs. The Nitrogen density at the Si-SiON interface and the thickness of SiON layer are shown to impact temperature, time, and field dependencies of NBTI. The plausible material dependence of NBTI physical mechanism is explored. © 2007 IEEE.

Naresh Emani

Department of Electrical Engineering

Maheta V.D.

Purawat S.

Islam A.E.

Olsen C.

Ahmed K.

Alam M.A.

Mahapatra S.

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Technical Digest - International Electron Devices Meeting, IEDM

Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I DLIN technique

Journal	Technical Digest - International Electron Devices Meeting, IEDM
ISSN	01631918
Open Access	No