The magnetoresistance (MR) of Fe3 O4 -graphene- Fe3 O4 junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe3 O4 /graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes -1.6% MR to the whole device at room temperature and can be regulated by an external electric field. © 2011 American Institute of Physics.