A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Shishir Kumar

Department of Electrical Engineering

Z.-M. Liao

H.-C. Wu

G.S. Duesberg

Y.-B. Zhou

G.L.W. Cross

I.V. Shvets

D.-P. Yu

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IIT Hyderabad

Advanced Materials

Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Journal	Advanced Materials
ISSN	09359648