A new method for the separation of contact resistance (Rcontact) into Schottky barrier resistance (RSB) and interlayer resistance (RIL) is proposed for multilayered MoS2 FETs. While RSB varies exponentially with Schottky barrier height (Φbn), RIL essentially remains unchanged. An empirical model utilizing this dependence of Rcontact versus Φbn is proposed and fits to the experimental data. The results, on comparison with the existing reports of lowest Rcontact, suggest that the extracted RIL (1.53 kω μm) for an unaltered channel would determine the lower limit of intrinsic Rcontact even for barrierless contacts for multilayered exfoliated MoS2 FETs. © 2015 IEEE.