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Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co23O6Published in
2008
DOI: 10.1063/1.2929745
Volume: 92
Issue: 21
Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co23O6. Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples. © 2008 American Institute of Physics.
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Interfacial contribution to the dielectric response in semiconducting LaBiMn4?3Co2?3O6. Applied Physics Letters 92, 21 p212905 (2008)] and may be found at https://doi.org/10.1063/1.2929745.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
Ranjith Ramadurai- Study of stiffness and flexible sensing performance of poly-vinylidene fluoride (PVDF) a piezo polymer with varying polarization components
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