Using density functional theory, the interface local magnetic moment and its variation are explored in SrRuO3LaAlO3vacuum (001) heterostructures with increasing number of LaAlO3 unit cells. The computed magnetic moment projected on interface planes is found to modulate nearly periodically as the number of LaAlO3 unit cells is increased in SrRuO3LaAlO3vacuum structure. The magnetic moment localized at the interface RuO2 plane shifts from a lower value of ∼ 0.7μB to a higher value of ∼ 1.35 μB and changes by 42% as LaAlO3 changes from non-stoichiometric to stoichiometric with increase in its thickness. However, the magnitude shifts from higher to lower value as LaAlO3 changes from stoichiometric to non-stoichiometric with further increase in thickness. The large variation and nearly periodic modulation of magnetic moment localized at the interface with increasing LaAlO3 thickness arise due to spin-dependent screening of effective total charge of LaAlO3 film by accumulated free carriers at the interface in heterostructure. The modulation of interface local magnetic moment using ultrathin LaAlO3 film at the oxide heterointerfaces can be exploited as an additional functionality, in conjunction with those reported recently such as control of band alignment and enhancement of the electric conductivity at the interface. © 2018 IEEE.