We investigate the excitation behavior of a repulsive impurity doped quantum dot under the influence of an oscillatory external electric field. We have considered Gaussian impurity centers doped at on-center position. The investigation reveals that a variation in the strength and spatial stretch of the dopant causes maximization and minimization in the average excitation rate, respectively. The findings are expected to have important applications involving quantum dot nanodevices. © 2011 Elsevier B.V. All rights reserved.