A gas phase controlled graphene synthesis resembling a CVD process that does not critically depend on cooling rates is reported. The controllable catalytic CVD permits high quality large-area graphene formation with deft control over the thickness from monolayers to thick graphitic structures at temperatures as low as 750 °C. © The Royal Society of Chemistry 2010.

Shishir Kumar

Department of Electrical Engineering

N. McEvoy

T. Lutz

G.P. Keeley

V. Nicolosi

C.P. Murray

W.J. Blau

G.S. Duesberg

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Indian Institute of Technology Hyderabad (IITH) is a premier institute of science and technology established in 2008. IITH has been consistently ranked in the&nbsp;<a href="https://iith.ac.in/reports/" rel="noopener noreferrer">top 10 institutes</a>&nbsp;in India for Engineering&nbsp;<a href="https://www.nirfindia.org/2021/EngineeringRanking.html" rel="noopener noreferrer" target="_blank">according to NIRF</a>&nbsp;making it one of the most coveted schools for science and technology in the country.

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IIT Hyderabad

Chemical Communications

Gas phase controlled deposition of high quality large-area graphene films

Journal	Data powered by TypesetChemical Communications
Publisher	Data powered by TypesetRoyal Society of Chemistry
ISSN	13597345