Silicon bulk micromachining using the wet anisotropic etching process is widely employed for the development of commercial products such as an inkjet printer head, a pressure sensor, accelerometers, infrared sensors, etc using (1 0 0) silicon wafers. In wet anisotropic etching, the resultant shape and size of the microstructures are restricted by crystallographic properties of silicon. If structures such as seismic mass in an accelerometer are required to be created, convex corners will emerge in the etching process. Considerable deformation occurs at convex corners resulting in poor control on the shape and size of the microstructure. Various methods/techniques are developed to overcome the problem of undercutting at convex corners in a (1 0 0) silicon wafer. Here, we have reviewed the fabrication techniques for the realization of convex corners in silicon bulk micromachining technology. The review is restricted to the wet anisotropic etching process which is usually performed in potassium hydroxide solution, ethylenediamine pyrocatechol solution, tetramethylammonium hydroxide, etc. The corner compensation method is the most widely used technique for the fabrication of convex corners. Various types of corner compensating design have been proposed by different research groups. The corner compensation method gives nearly sharp corners. Recently developed techniques, which do not use any compensating design, give perfect convex corners. The limitations and advantages of all the techniques have been discussed. © 2007 IOP Publishing Ltd.