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Excitonic bandgap dependence on stacking configuration in four layer graphenePublished in
2013
DOI: 10.1063/1.4825263
Volume: 103
Issue: 16
Different crystallographic stacking configurations in graphene provide an additional degree of freedom in the electronic structure. We have conducted systematic investigations of the transport properties of ABAB- and ABCA-stacked four-layer graphene. Our results reveal that ABAB and ABCA graphene exhibit markedly different properties as functions of both temperature and magnetic field. The temperature-dependant resistance measurement reveals that the excitonic gap of ABCA stacked graphene increases as a function of temperature, while for ABAB, a shrinking excitonic gap configuration is observed. © 2013 AIP Publishing LLC.
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Excitonic bandgap dependence on stacking configuration in four layer graphene. Applied Physics Letters 103, 16 p163108 (2013)] and may be found at https://doi.org/10.1063/1.4825263.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
| Open Access | No |
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