The aim of this paper is to present a flexible TCAD platform called Nano-Electronic Simulation Software (NESS) which enables the modelling of contemporary future electronic devices combining different simulation paradigms (with different degrees of complexity) in a unified simulation domain. NESS considers confinement-aware band structures, generates the main sources of variability, and can study their impact using different transport models. In particular, this work focuses on the new modules implemented: Kubo-Greenwood solver, Kinetic Monte Carlo solver, Gate Leakage calculation, and a full-band quantum transport solver in the presence of hole-phonon interactions using a mode-space k.p approach in combination with the existing NEGF module. © 2020 The Japan Society of Applied Physics.

Oves Badami

Department of Electrical Engineering

C. Medina-Bailon

H. Carrillo-Nunez

T. Dutta

D. Nagy

F. Adamu-Lema

V.P. Georgiev

A. Asenov

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International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Enhanced capabilities of the nano-electronic simulation software (NESS)

Journal	Data powered by TypesetInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.