Potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH) are most extensively used etchants for wet anisotropic etching process. Amongst these two etchants, KOH is a low cost etchant and provides high etch rate anisotropy between Si{111} and Si{100} planes. Increasing the etch rate is an important research problem for both academic and industrial applications. In this research, we study the effect of hydroxylamine (NH2OH) in 20 wt% KOH on the etching characteristics of Si{100}. This type of wafer orientation (i.e. Si{100}) is selected owing to its popularity in fabricating planar semiconductor devices (e.g. diode, transistor, complementary metal oxide semiconductor (CMOS), etc.) and MEMS components (e.g. cantilever, diaphragm, etc.). A systematic parametric analysis of various concentrations of hydroxylamine (from 0 to 20% in step of 5%) added 20 wt% KOH is carried out and its effect on the etching characteristics is discussed. We have found that the etch rate of Si{100} is increased threefold when 15% NH2OH is added to 20 wt% KOH solution. Additionally, this concentration also exhibits improved etching characteristics including undercutting rate, etch selectivity, and surface morphology. We have obtained improved etching characteristics when NH2OH is added to 20 wt% KOH. Due to an improvement in etching characteristics, present research is very useful to pave the path toward application in microfabrication industries as well as academic research laboratories. © 2017 The Electrochemical Society. All rights reserved.