Header menu link for other important links
X
Design and fabrication of SOI technology based MEMS differential capacitive accelerometer structure
N. Gupta, S. Dutta, A. Panchal, I. Yadav, S. Kumar, Y. Parmar, , K.K. Jain, D.K. Bhattacharya
Published in Springer New York LLC
2019
Volume: 30
   
Issue: 16
Pages: 15705 - 15714
Abstract
This paper discusses the design and fabrication of MEMS differential capacitive accelerometer (z-axis sensitive) structure. The accelerometer structure consists of one each movable and reference capacitors in the single accelerometer die fabricated using highly conductive (p-type, resistivity: 0.001 Ω cm) SOI substrate. Resonant frequencies of the designed movable and reference capacitive structures were found to be 9.6 kHz and 150 kHz respectively. Corresponding rest capacitance (at 0 g) of both the capacitors was 2.21 pF. The movable and reference structures showed a deflection of 0.14 µm and 0.6 nm respectively at 50 g applied acceleration. Corresponding changes in capacitances of the movable and reference capacitors were 82.3 fF and < 0.33 fF respectively. The designed accelerometer showed a scale factor sensitivity of the movable capacitor was of ~ 1.65 fF/g. The device demonstrated a dynamic range of in − 17 g to 42 g with a full-scale non-linearity of ~ 3%. Corresponding measured scale factor sensitivity in the centrifuge test was found to be ~ 47 mV/g with an acceleration resolution of ~ 17 mg. The device exhibited cross-axis sensitivity of ~ 2% in the full-scale range. Measured 3 dB bandwidth (380 Hz) of the device matches reasonably with the simulated value (~ 400 Hz). © 2019, Springer Science+Business Media, LLC, part of Springer Nature.
About the journal
JournalData powered by TypesetJournal of Materials Science: Materials in Electronics
PublisherData powered by TypesetSpringer New York LLC
ISSN09574522