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Composition controlled synthesis and Raman analysis of ge-rich Si xGe 1 - x nanowires
, G.U. Sumanasekera, Z. Chen, M.K. Sunkara
Published in
2008
Volume: 8
   
Issue: 6
Pages: 3153 - 3157
Abstract
Here, we report the synthesis of Si xGe 1-x nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si xGe 1-x nanowires. Analysis of peak intensities observed for Ge (near 300 cm -1) and the Si-Ge alloy (near 400 cm -1) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting Si xGe 1 - x1 alloy nanowires is controlled by the vapor phase composition of Ge. Copyright © 2008 American Scientific Publishers All rights reserved.
About the journal
JournalJournal of Nanoscience and Nanotechnology
ISSN15334880