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Carbon-silicon Schottky barrier diodes
C. Yim, N. McEvoy, E. Rezvani, , G.S. Duesberg
Published in
2012
Volume: 8
   
Issue: 9
Pages: 1360 - 1364
Abstract
The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained. These remarkable values, which are not far away from those of commercial products are obtained repeatedly on non-optimized substrates with fully scalable processes. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
About the journal
JournalSmall
ISSN16136810