In this paper, we present a self-aligning pre-etched pattern based technique to precisely determine the <110> direction on Si{110} wafer surface. These patterns after etching, reveals the crystallographic direction by self-aligning itself in a straight line at the <110> direction while getting self-misaligned at other directions. As a result, the exact direction can be identified by a simple visual inspection under a microscope without the need of measurement of any kind. To test the accuracy of the proposed method, we fabricated two 32 mm long channels, one oriented along the <110> direction and other along the <112> directions using the <110> direction obtained from the proposed method as the reference. The undercutting is measured at different locations on the two channels and is found to vary within a submicron range in each case. Such uniform undercutting implies that the presented technique to determine the <110> direction is accurate. This methodology is simple and can be used conveniently to fabricate MEMS structures with high dimensional accuracy. © 2016, Springer-Verlag Berlin Heidelberg.